1 CMPA0060002D 2 watt, 20 mhz - 6000 mhz gan hemt mmic power amplifer crees CMPA0060002D is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths compared to si and gaas transistors. this mmic employs a distributed (traveling-wave) amplifer design approach, enabling extremely wide bandwidths to be achieved in a small footprint. rev 1.1 C april 2012 pn: CMPA0060002D typical performance over 0.5-6.0 ghz (t c = 25?c) parameter 0.5 ghz 1.0 ghz 2.5 ghz 4.0 ghz 6.0 ghz units gain 18.7 17.4 17.6 17.4 17.6 db saturated output power @ p in 23 dbm 7.0 6.3 5.7 4.3 3.6 w power gain @ p in 23 dbm 15.4 15.0 14.5 13.3 12.5 db pae @ p in 23 dbm 43 40 36 28 31 % note: v dd = 28 v, i d = 100 ma features ? 17 db small signal gain ? 2 w typical p sat ? operation up to 28 v ? high breakdown voltage ? high temperature operation ? size 0.169 x 0.066 x 0.004 inches applications ? ultra broadband amplifers ? fiber drivers ? test instrumentation ? emc amplifer drivers subject to change without notice. www.cree.com/wireless
2 absolute maximum ratings (not simultaneous) at 25?c parameter symbol rating units drain-source voltage v dss 84 vdc gate-source voltage v gs -10, +2 vdc storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 2 ma thermal resistance, junction to case (packaged) 1 r jc 4.0 ?c/w note 1 eutectic die attach using 80/20 ausn mounted to a 40 mil thick cuw carrier. electrical characteristics (frequency = 20 mhz to 6,000 mhz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics gate threshold voltage 1 v (gs)th -3.8 -3.0 -2.7 v v ds = 20 v, ?i d = 2 ma gate quiescent voltage v gs(q) C -2.7 C vdc v dd = 26 v, i dq = 100 ma saturated drain current 2 i ds C 1.94 C a v ds = 6.0 v, v gs = 2.0 v rf characteristics 5 small signal gain 3 s21 13.5 18 C db v dd = 26 v, i dq = 100 ma input return loss s11 C 9 C db v dd = 26 v, i dq = 100 ma output return loss s22 C 11 C db v dd = 26 v, i dq = 100 ma output power 4 p out 2 4 C w v dd = 26 v, i dq = 100 ma, p in = 23 dbm power added effciency pae C 30 C % v dd = 26 v, i dq = 100 ma, p in = 23 dbm power gain g p C 13.0 C db v dd = 26 v, i dq = 100 ma, p in = 23 dbm output mismatch stress vswr C C 5 : 1 y no damage at all phase angles, v dd = 26 v, i dq = 100 ma, p in = 23 dbm notes: 1 the device will draw approximately 20-25 ma at pinch off due to the internal circuit structure. 2 scaled from pcm data. 3 the lowest test frequency is 1.0 ghz due to the lack of a low frequency termination. 4 test frequencies 1.0, 2.5, and 4.0 ghz. 5 all data pulsed with pulse width = 10 sec, duty cycle = 0.1%. CMPA0060002D rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/wireless copyright ? 2009-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 die dimensions (units in microns) overall die size 4280 x 1670 (+0/-50) microns, die thickness 100 (+/-10) micron. all gate and drain pads must be wire bonded for electrical connection. pad number function description pad size (microns) 1 rf in 1 rf-input pad. matched to 50 ohm. requires gate control from an external bias Ct from -2.3 v to -3.8 v. 200 x 150 2 gate termination off chip termination for the gate. it needs to be dc-blocked . 200 x 150 3 drain termination off chip termination for the drain. it needs to be dc-blocked. 200 x 150 4 rf out 1 rf-output pad. matched to 50 ohm. requires drain supply from an external bias Ct up to 26 v , 800 ma 200 x 150 notes: 1 the rf in and out pads have a ground-signal-ground confguration with a pitch of 1 mil (25 um).. die assembly notes: ? recommended solder is ausn (80/20) solder. refer to crees website for the eutectic die bond procedure application note at www.cree.com/wireless. ? vacuum collet is the preferred method of pick-up. ? the backside of the die is the source (ground) contact. ? die back side gold plating is 5 microns thick minimum. ? thermosonic ball or wedge bonding are the preferred connection methods. ? gold wire must be used for connections. ? use the die label (xx-yy) for correct orientation. CMPA0060002D rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/wireless copyright ? 2009-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 functional block diagram this device employs a wideband, traveling wave amplifer topology. it has an internal termination for both the drain and the gate, which works well over 2.5-6.0 ghz. for operation below 2.5 ghz an external termination is required. this termination needs to be dc-blocked and suitable to withstand up to 3 w of rf power. (refer to the reference design section for the lf-termination in this data sheet for more details). the circuits also require external wideband bias Cts to supply voltage to the gate and drain. the bias-t at the drain needs to be designed to handle 28 v and up to 800 ma. figure 1. CMPA0060002D rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/wireless copyright ? 2009-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 external termination reference design the following is a plot of the gain of the die only. notes: 1 an off chip termination is needed to reduce the high gain peak at low frequencies. 2 the off chip termination should be designed to minimize the impact on the mmics performance at higher frequencies. lrc reference circuit the drain and gate circuit use the same l and c components but different values for the resistor. figure 2. the drain resistor needs to be dimensioned to handle 3 w of rf dissipation for the lowest frequencies while the gate resistor needs to handle 0.5 w. the suppliers of the smt components are: l1 = 47 nh, coilcraft pn: 0402cs C47nxjb c1 = 470 pf murata pn: grm1885c2a471a01d die only 10 12 14 16 18 20 22 24 26 28 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 frequency (ghz) gai n ( d b ) s21 (die only) CMPA0060002D rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/wireless copyright ? 2009-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 typical performance power gain vs frequency power output vs frequency v dd = 28 v, p in = 23 dbm v dd = 28 v, p in = 23 dbm \ power added effciency vs frequency gain and return losses vs frequency v dd = 28v, p in = 23 dbm v dd = 28 v, i dq = 100 ma 12 14 16 18 20 gai n ( d b ) power gain at 28 + 48v at pin = 23 dbm 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 gai n ( d b ) frequency (ghz) power gain, 28v 30 35 40 45 50 po w er a d d ed ef f i ci en cy ( % ) pae_28v_48v@ pin 23 dbm 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 po w er a d d ed ef f i ci en cy ( % ) frequency (ghz) pae, 28v 36 38 40 42 44 46 48 50 po w er ou t p u t ( d b m) power output at 28v + 48v at pin = 23 dbm 20 22 24 26 28 30 32 34 36 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 po w er ou t p u t ( d b m) frequency (ghz) power output, 28v 0 2 4 6 8 10 12 14 16 18 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) gai n ( d b ) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 i n p u t / ou t p u t r etu r n l o sses ( d b ) s21_28v s22_28v s11_28v CMPA0060002D rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/wireless copyright ? 2009-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/wireless sarah miller marketing & export cree, rf components 1.919.407.5302 ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CMPA0060002D rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/wireless copyright ? 2009-2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
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